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红外光敏电阻系列产品

美国NEP专业生产各种规格高品质硫化铅,硒化铅,铟镓砷红外探测器,广泛用于以下产品:

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火焰探测器,锅炉控制等

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气体分析仪,包括工业气体、汽车尾气等

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湿度分析仪

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红外温度测量

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光谱仪

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蛋白质成分分析仪

我们提供以下产品:

  1. 硫化铅红外光敏电阻系列 (PbS)

  2. 电子冷却硫化铅红外光敏电阻系列 (TEC PbS)

  3. 硫化铅红外线阵探测器 (PbS Linear Array)

  4. 硒化铅红外光敏电阻 (PbSe)
    bullet

    红紫外双色探测器

    bullet

    双通道红外二氧化碳探测器

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    双通道红外酒精探测器

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    双通道红外一氧化碳探测器

    bullet

    四通道红外气体探测器

  5. 电子冷却硒化铅红外光敏电阻 (TEC PbSe)

  6. 硒化铅红外线阵探测器 (PbSe Linear Array)

  7. 铟镓砷InGaAs PIN光电二极管近红外探测器

选购这些探测器时请同时参考最先进的MEMS脉冲红外光源.

相应曲线:

硫化铅:

硫化铅响应曲线   硫化铅响应曲线  硫化铅响应曲线

硒化铅:

硒化铅响应曲线  硒化铅响应曲线  硒化铅响应曲线

1. 硫化铅光敏电阻系列:

硫化铅探测器图片

电气参数

Test Conditions at 25°C - Typical A & AM B & BM C & CM
D* (Pk.,600,1) x 1011 .5-1.2 .5-1.2 .5-1.2
Wavelength Cut-off - Microns 3.0 3.0 2.7
Peak Wavelength Response - Microns 2.5 2.5 2.2
Time Constant - Microseconds <100 100-300 >300
Resistance - Megohms .2-2.0 .2-2.0 .5-10

注:型号中的M为密封封装.

活性区参数

Code
Number
Active Area Bias Voltage Typical  VW-1
Responsivity
Package
Size
Inches mm Typical Maximum
.25 .010 .25 10 20 1.0x106 TO-5 & TO-46
.5 .020 .5 20 40 6.0x105 TO-5 & TO-46
1 .040 1 50 100 3.0x105 TO-5 & TO-46
2 .080 2 100 200 1.5x105 TO-5
3 .120 3 150 300 1.0x105 TO-5
5 .200 5 250 500 6.0x104 TO-8
10 .400 10 500 1000 3.0x104 TO-3

机械参数

TO-46

TO-5

TO-46封装尺寸

TO-5封装尺寸

 

TO-8

TO-3

TO-8封装尺寸

TO-3封装尺寸

典型应用电路:

典型应用电路 

2. 电子冷却硫化铅光敏电阻系列

电子冷却硫化铅探测器图片

电气参数

Test Conditions at 25° C -Typical D D2 D21**
D* (Pk.,600,1) x 1011 1.5 2.5 2.8
Wavelength Cut-off - Microns 3.1 3.2 3.3
Peak Wavelength Response - Microns 2.5 2.5 2.5
Time Constant - Milliseconds 1-2.5 1-2.5 1-2.5
Resistance - Megohms .5-10 .5-10 .5- 5
Operating Temperature - °C -20 -30 -45
Cooler Power - Volts DC/Amps .8V/1.8A .8V/1.4A 2.0V/1.4A

NOTE: 3-6 Stage Thermoelectric Coolers and Vacuum LN Dewars also available. Contact us for further details.
**TO-8, TO-66 or TO-3 packages only.

活性区参数

Code
Number
Active Area Bias Voltage Typical VW-1X105
Responsivity
Package
Size
Inches mm Typical Maximum -20 -30 -45
1 .040 1 50 100 6.0 9.0 13.0 TO-5-37-8-66
2 .080 2 100 200 3.0 4.5 6.5 TO-5-37-8-66
3 .120 3 150 300 2.5 3.5 4.5 TO-5-37-8-66
5 .200 5 250 500 1.2 2.0 3.0 TO-8-66
10 .400 10 500 1000 .6 1.0 1.5 TO-3

机械参数

机械参数

3. 硫化铅线阵

主要性能:

Array
bulletPbS Array 1-3 microns
bulletPbSe Array 1-5 microns
bulletPbS D* >8 x 1010 Note
bulletPbSe D* >3 x 109 Note
bulletSquare or rectangular geometry
bulletPitch down to 59 microns
bulletPixels 256
bulletThermoelectrically cooled
bulletTE Cooler Controller
bulletOperating temp. down to 253K
bulletOptical filters
bulletLow cost
bulletCustom designs
硫化铅阵列
Multiplexing
bulletDC integrating
bulletDark current subtraction
bulletSample rates from 100 Hz to 1.2 MHz
bulletIndependent or slave operation
bulletCustom interfaces available
bulletIntegration times from 0.05 msec to 0.66 sec.
System Requirements
bullet±12 to ±15VDC
bulletTE Cooler 5V @ 2 amps (typical)

Amplifier Specifications

bulletOutput voltage range up to ±12V
bulletOutput current 2-3 mAmp typical
and up to 30 mAmp available
bulletAdjustable output gain available

4. 硒化铅光敏电阻

硒化铅探测器

电气参数

Test Conditions at 25°C - Typical F & FM FA & FAM FS & FSM
D* (Pk.,1000,1) x 109 1.0 - 3.0 3.0 - 6.0 >6.0
Wavelength Cut-off - Microns 4.5 - 5.0 4.5 - 5.0 4.5 - 5.0
Peak Wavelength Response - Microns 3.8 - 4.3 3.8 - 4.3 3.8 - 4.3
Time Constant - Microseconds 1 - 3 1 - 3 1 - 3
Resistance - Megohms .1 - 4 .1 - 4 .1 - 4

活性区参数

Code
Number
Active Area Bias Voltage Typical VW-1 Package
Size
Inches mm Typical Maximum
1 .040 1 50 100 6,000 TO-5 & TO-46
2 .080 2 100 200 3,000 TO-5
3 .120 3 150 300 2,000 TO-5
5 .200 5 250 500 1,200 TO-8
10 .400 10 500 1000 600 TO-3

机械参数

TO-46 TO-5
TO-46封装 TO-5封装
TO-8 TO-3
TO-8封装 TO-3封装

 

5. 电子冷却硒化铅光敏电阻

电气参数

Test Conditions at 25° C G G2 G21** GS21**
D* (Pk.,1000,1) x 1010 .7 1.2 1.5 2.0
Wavelength Cut-off - Microns 5.2 5.3 5.4 5.4
Peak Wavelength Response - Microns 4.3 4.5 4.6 4.6
Time Constant - Micro Seconds 10 15 20 20
Resistance - Megohms .2 - 7 .2 - 10 .2 - 15 .2 - 15
Operating Temperature - °C -20 -30 -45 -45
Cooler Power 1.2V/1.8A 1.3V/1.6A 2.2V/1.2A 2.2V/1.2A

NOTE: 3-6 Stage Thermoelectric Coolers and LN2 Dewars available. Please contact us for further details.
**TO-8, TO-66 and TO-3 packages only.

活性区参数

Code
Number

Active Area Bias Voltage Typical VW-1
Responsivity
Package
Size
Inches mm Typical Maximum -20 -30 -45
1 .040 1 50 100 9000 13000 16000 TO-5-37-8-66
2 .080 2 100 200 5000 8000 11000 TO-5-37-8-66
3 .120 3 150 300 3000 5000 6500 TO-5-37-8-66
5 .200 5 250 500 2000 3000 3500 TO-8-66
10 .400 10 500 1000 1000 1500 1800 TO-3

机械参数

机械图纸

 

6. 硒化铅线阵

主要性能:

Array
bulletPbS Array 1-3 microns
bulletPbSe Array 1-5 microns
bulletPbS D* >8 x 1010 Note
bulletPbSe D* >3 x 109 Note
bulletSquare or rectangular geometry
bulletPitch down to 59 microns
bulletPixels 256
bulletThermoelectrically cooled
bulletTE Cooler Controller
bulletOperating temp. down to 253K
bulletOptical filters
bulletLow cost
bulletCustom designs
硒化铅线阵
Multiplexing
bulletDC integrating
bulletDark current subtraction
bulletSample rates from 100 Hz to 1.2 MHz
bulletIndependent or slave operation
bulletCustom interfaces available
bulletIntegration times from 0.05 msec to 0.66 sec.
System Requirements
bullet±12 to ±15VDC
bulletTE Cooler 5V @ 2 amps (typical)

Amplifier Specifications

bulletOutput voltage range up to ±12V
bulletOutput current 2-3 mAmp typical
and up to 30 mAmp available
bulletAdjustable output gain available

Note: These D* values are for unmultiplexed arrays. D* is affected by sample rates, integration times, etc.

7. InGaAs PIN光电二极管探测器

InGaAs PIN Photodiode Detectors RT 非致冷型
主要性能:
bullet低暗电流,低电容,高响应.
bulletMesa 结构, 无信号时不导电.
bullet适合于DC - 3GHz, 以及光纤应用.
Part # Diameter mm Resp. A/W @1.3μm Resp. A/W @1.55μm Dark Current nA Cutoff Freq. MHz Cap. pf Shunt Res. MΩ Peak D* cm*Hz½/W NEP W/Hz½
I5-.04-46 .040 .85 .90 .075 3000 .6 9000 >1012 <10-14
I5-.08-46 .080 .85 .90 .10 2200 .9 7000 >1012 <10-14
I5-.1-46 .100 .85 .90 .15 2000 1 6000 >1012 <10-14
I5-.3-46 .300 .85 .90 .4 350 5 900 >1012 <10-14
I5-.5-46 .500 .85 .90 .7 200 10 250 >1012 <10-13
I5-1-46 1.00 .85 .90 2 30 100 90 >1012 <10-13
I5-2-5 2.00 .85 .90 8 3 600 20 >1012 <10-13
I5-3-5 3.00 .85 .90 20 1.75 1200 9 >1012 <10-13
I5-5-8 5.00 .85 .90 30 .5 4000 2 >1012 <10-12
I5-10-3 10.00 .85 .90 100 .15 14000 .5 >1012 <10-12

InGaAs封装 InGaAs响应曲线
 



STEVEN SEPVEST CORPORATION
9720 Capital Ct, Suite 404B, Manassas, VA 20110, USA
TEL: (703) 547-8930     Fax: (703) 891-9809
Email: sales@sepvest.com
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